Synthesis and study of highly dense and smooth TiN thin films

This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure N2 gas, ion energy (Ei) and Ti interface in TiN thin film samples deposited using beam sputtering at ambient temperature (300 K). At optimum were prepared with or without Ei = 1.0 0.5 keV. They characterized x-ray reflectivity (XRR) to deduce thickness, roughness density. The films was found be below 1 nm, when lower keV interfaced layer Ti. Under these conditions, density sample reaches 5.80(±0.03) g cm?3, value highest hitherto for any sample. X-ray diffraction electrical resistivity measurements performed. It that cumulative effect reduction from addition favors (111) oriented growth leading dense smooth substantial resistivity. has been attributed surface kinetics mechanism (simulated SRIM) where available sputtered species () leaving target is favoring defects free homogeneously distributed films. Secondary mass spectroscopy depth profile confirm uniform distribution N across electronic structure probed K-edge L-edge absorption information about crystal field spin-orbit splitting confirmed phase formation. In essence, through this work, we demonstrate role achieving highly low need high substrate biasing during deposition process.